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  d a t a sh eet product speci?cation supersedes data of 2000 jul 24 file under integrated circuits, ic11 2001 jan 30 integrated circuits UBA2021 630 v driver ic for cfl and tl lamps
2001 jan 30 2 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 features adjustable preheat and ignition time adjustable preheat current adjustable lamp power lamp temperature stress protection at higher mains voltages capacitive mode protection protection against a too-low drive voltage for the power mosfets. general description the UBA2021 is a high-voltage ic intended to drive and control compact fluorescent lamps (cfl) or fluorescent tl-lamps. it contains a driver circuit for an external half-bridge, an oscillator and a control circuit for starting up, preheating, ignition, lamp burning and protection. quick reference data symbol parameter conditions min. typ. max. unit high voltage supply v fs high side supply voltage i fs <15 m a; t < 0.5 s -- 630 v start-up state v vs(start) oscillator start voltage - 11.95 - v v vs(stop) oscillator stop voltage - 10.15 - v i vs(standby) standby current v vs =11v - 200 -m a preheat mode f start start frequency - 108 - khz t ph preheat time c cp = 100 nf - 666 - ms v rs(ctrl) control voltage at pin rs -- 600 - mv frequency sweep to ignition f b bottom frequency - 42.9 - khz t ign ignition time - 625 - ms normal operation f b bottom frequency - 42.9 - khz t no non-overlap time - 1.4 -m s i tot total supply current f b = 43 khz - 1 - ma r g1(on) , r g2(on) high and low side on resistance - 126 -w r g1(off) , r g2(off) high and low side off resistance - 75 -w feed-forward f ff feed-forward frequency i rhv = 0.75 ma - 63.6 - khz i rhv = 1.0 ma - 84.5 - khz i i(rhv) operating range of input current at pin rhv 0 - 1000 m a
2001 jan 30 3 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 ordering information block diagram type number package name description version UBA2021t so14 plastic small outline package; 14 leads; body width 3.9 mm sot108-1 UBA2021p dip14 plastic dual in-line package; 14 leads (300 mil) sot27-1 handbook, full pagewidth mgs988 UBA2021 supply band gap reference oscillator timing ci 2 g1 control rs monitor non overlap level shifter sb high side driver low side driver 1 fs 14 cf 12 rref 10 vs n.c. 5 rhv 13 4 cp 8 rs 9 bootstrap charging circuit 3 s1 6 g2 7 11 pgnd sgnd fig.1 block diagram.
2001 jan 30 4 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 pinning symbol pin description fs 1 high side ?oating supply voltage g1 2 gate high transistor (t1) s1 3 source high transistor (t1) n.c. 4 high-voltage spacer, not to be connected vs 5 low voltage supply g2 6 gate low transistor (t2) pgnd 7 power ground cp 8 timing/averaging capacitor rs 9 current monitoring input rref 10 reference resistor sgnd 11 signal ground cf 12 oscillator capacitor rhv 13 start-up resistor/feed-forward resistor ci 14 integrating capacitor handbook, halfpage mgs989 UBA2021t 1 2 3 4 5 6 7 8 14 13 12 11 10 9 fs g1 s1 n.c. vs g2 pgnd cp rs rref sgnd cf rhv ci fig.2 pin configuration (so14). handbook, halfpage mgs990 UBA2021p 1 2 3 4 5 6 7 8 14 13 12 11 10 9 fs g1 s1 n.c. vs g2 pgnd cp rs rref sgnd cf rhv ci fig.3 pin configuration (dip14).
2001 jan 30 5 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 functional description introduction the UBA2021 is an integrated circuit for electronically ballasted compact fluorescent lamps and their derivatives operating with mains voltages up to 240 v (rms). it provides all the necessary functions for preheat, ignition and on-state operation of the lamp. in addition to the control function, the ic provides level shift and drive functions for the two discrete power mosfets, t1 and t2 (see fig.7). initial start-up initial start-up is achieved by charging capacitor cs9 with the current applied to pin rhv. at start-up, mosfet t2 conducts and t1 is non-conducting, ensuring c boot becomes charged. this start-up state is reached for a supply voltage v vs(reset) (this is the voltage level at pin vs at which the circuit will be reset to the initial state) and maintained until the low voltage supply (v vs ) reaches a value of v vs(start) . the circuit is reset in the start-up state. oscillation when the low voltage supply (v vs ) has reached the value of v vs(start) the circuit starts oscillating in the preheat state. the internal oscillator is a current-controlled circuit which generates a sawtooth waveform. the frequency of the sawtooth is determined by the capacitor c cf and the current out of pin cf (mainly set by r rref ). the sawtooth frequency is twice the frequency of the signal across the load. the ic brings mosfets t1 and t2 alternately into conduction with a duty factor of approximately 50%. figure 4 represents the timing of the ic. the circuit block 'non-overlap' generates a non-overlap time t no that ensures conduction periods of exclusively t1 or t2. time t no is dependent on the reference current i rref . operation in the preheat mode the circuit starts oscillating at approximately 2.5 f b (108 khz). the frequency gradually decreases until a defined value of current i shunt is reached (see fig.5). the slope of the decrease in frequency is determined by capacitor c ci . the frequency during preheating is approximately 90 khz. this frequency is well above the resonant frequency of the load, which means that the lamp is off; the load consists of l2, c5 and the electrode resistance only. the preheat time is determined by capacitor c cp . the circuit can be locked in the preheat state by connecting pin cp to ground. during preheating, the circuit monitors the load current by measuring the voltage drop over external resistor r shunt at the end of conduction of t2 with decision level v rs(ctrl) . the frequency is decreased as long as v rs >v rs(ctrl) . the frequency is increased for v rs 2001 jan 30 6 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 ignition state the rs monitoring function changes from v rs(ctrl) regulation to capacitive mode protection at the end of the preheat time. normally this results in a further frequency decrease down to the bottom frequency f b (approximately 43 khz). the rate of change of frequency in the ignition state is less than that in the preheat mode. during the downward frequency sweep, the circuit sweeps through the resonant frequency of the load. a high voltage then appears across the lamp. this voltage normally ignites the lamp. failure to ignite excessive current levels may occur if the lamp fails to ignite. the ic does not limit these currents in any manner. transition to the burn state assuming that the lamp has ignited during the downward frequency sweep, the frequency normally decreases to the bottom frequency. the ic can transit to the burn state in two ways: 1. in the event that the bottom frequency is not reached, transition is made after reaching the ignition time t ign . 2. as soon as the bottom frequency is reached. the bottom frequency is determined by r rref and c cf . feed-forward frequency above a defined voltage level the oscillation frequency also depends on the supply voltage of the half-bridge (see fig.6). the current for the current-controlled oscillator is in the feed-forward range derived from the current through r rhv . the feed-forward frequency is proportional to the average value of the current through r rhv within the operating range of i i(rhv) , given the lower limit set by f b . for currents beyond the operating range (i.e. between 1.0 and 1.6 ma) the feed-forward frequency is clamped. in order to prevent feed-forward of ripple on v in , the ripple is filtered out. the capacitor connected to pin cp is used for this purpose. this pin is also used in the preheat state and the ignition state for timing (t ph and t ign ). capacitive mode protection when the preheat mode is completed, the ic will protect the power circuit against losing the zero voltage switching condition and getting too close to the capacitive mode of operation. this is detected by monitoring voltage v rs at pin rs. if the voltage is below v rs(cap) at the time of turn-on of t2, then capacitive mode operation is assumed. consequently the frequency increases as long as the capacitive mode is detected. the frequency decreases down to the feed-forward frequency if no capacitive mode is detected. frequency modulation is achieved via pin ci. handbook, halfpage mgs992 time burn state ignition state preheat state f start f b fig.5 operation in the preheat mode. for calculations refer to chapter design equations. handbook, halfpage mgs993 bottom frequency feed-forward range f (khz) i rhv (ma) fig.6 feed-forward frequency. for calculations refer to chapter design equations.
2001 jan 30 7 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 ic supply initially, the ic is supplied from v in by the current through r rhv . this current charges the supply capacitor cs9 via an internal diode. as soon as v vs exceeds v vs(start) , the circuit starts oscillating. after the preheat phase is finished, pin rhv is connected to an internal resistor r i(rhv) ; prior to this, pin rhv is internally connected to pin vs. the voltage level at pin rhv thus drops from v vs +v diode to i rhv r i(rhv) . the capacitor cs9 at pin vs will now be charged via the snubber capacitor cs7. excess charge is drained by an internal clamp that turns on at voltage v vs(clamp) . minimum gate-source voltage of t1 and t2 the high side driver is supplied via capacitor c boot . capacitor c boot is charged via the bootstrap switch during the on-periods of t2. the ic stops oscillating at a voltage level v vs(stop) . given a maximum charge consumption on the load at pin g1 of 1 nc/v, this safeguards the minimum drive voltages v (g1 - s1) for the high side driver; see table 1. table 1 minimum gate-source voltages the drive voltage at g2 will exceed the drive voltage of the high side driver. frequency and change in frequency at any point in time during oscillation, the circuit will operate between f b and f start . any change in frequency will be gradual, no steps in frequency will occur. changes in frequency caused by a change in voltage at pin ci show a rather-constant df / dt over the entire frequency range. the following rates are realised (at a frequency of 85 khz and with a 100 nf capacitor connected to pin ci): for any increase in frequency: df / dt is between 15 and 37.5 khz/ms during preheat and normal operation: df / dt for a decrease in frequency is between - 6 and - 15 khz/ms during the ignition phase: df / dt for a decrease in frequency is between - 150 and - 375 hz/ms. ground pins pin pgnd is the ground reference of the ic with respect to the application. as an exception, pin sgnd provides a local ground reference for the components connected to pins cp, ci, rref and cf. for this purpose pins pgnd and sgnd are short-circuited internally. external connection of pins pgnd and sgnd is not preferred. the sum of currents flowing out of the pins cp, ci, rref, cf and sgnd must remain zero at any time. charge coupling due to parasitic capacitive coupling to the high voltage circuitry, all pins are burdened with a repetitive charge injection. given the typical application in fig.7, pins rref and cf are sensitive to this charge injection. for the rating q couple a safe functional operation of the ic is guaranteed, independent of the current level. charge coupling at current levels below 50 m a will not interfere with the accuracy of the v rs(cap) and v rs(ctrl) levels. charge coupling at current levels below 20 m a will not interfere with the accuracy of any parameter. frequency voltage <75 khz 8 v (min.) 75 khz to 85 khz 7 v (min.) 3 85 khz 6 v (min.)
2001 jan 30 8 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 limiting values in accordance with the absolute maximum rating system (iec 60134); all voltages referenced to ground. notes 1. human body model: all pins are 3000 v maximum, except pins fs, g1, s1 and vs which are 1500 v maximum and pin g2 which is 1000 v maximum. 2. machine model: all pins are 300 v maximum, except pin g2 which is 125 v maximum. thermal characteristics quality specification in accordance with snw-fq-611-e. symbol parameter conditions min. max. unit v fs high side ?oating supply voltage operating - 570 v t 0.5 s - 630 v i vs(clamp) clamp current t 0.5 s - 35 ma v rs input voltage pin rs - 2.5 +2.5 v transient of 50 ns - 15.0 +2.5 v sr slew rate at pins s1, g1 and fs (with respect to ground) - 4 +4 v/ns p power dissipation - 500 mw t amb ambient temperature - 40 +150 c t j junction temperature - 40 +150 c t stg storage temperature - 55 +150 c q couple charge coupling at pins rref and cf operating - 8+8pc v es electrostatic handling voltage human body model; note 1 - 3000 v machine model; note 2 - 300 v symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air so14 100 k/w dip14 60 k/w r th(j-pin) thermal resistance from junction to pcb in free air so14 50 k/w dip14 30 k/w
2001 jan 30 9 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 characteristics v vs =11v; v fs - v s1 =11v; t amb =25 c; all voltages referenced to ground; see fig.7; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit high voltage supply i l leakage current on high voltage pins v fs ,v g1 and v s1 = 630 v -- 15 m a start-up state v vs(reset) reset voltage t1 off; t2 on 4.0 5.5 6.5 v v vs(start) oscillator start voltage 11.35 11.95 12.55 v v vs(stop) oscillator stop voltage 9.55 10.15 10.75 v v vs(hys) supply voltage hysteresis 1.5 1.8 2.0 v i vs(standby) standby supply current at pin vs v vs = 11 v; note 1 150 200 250 m a d v (rhv - vs) voltage difference between pins rhv and vs i rhv = 1.0 ma 0.7 0.8 1.0 v v vs(clamp-start) clamp margin v vs(clamp) to v vs(start) note 2 0.2 0.3 0.4 v i vs(clamp) clamp current v vs <17v - 14 35 ma preheat mode f start starting frequency v ci = 0 v 98 108 118 khz t g conducting time t1 and t2 f start = 108 khz - 3.2 -m s i ci(charge) charge current at pin ci v ci = 1.5 v; v rs = - 0.3v384450 m a i ci(discharge) discharge current at pin ci v ci = 1.5 v; v rs = - 0.9 v 79 93 107 m a t ph preheat time 599 666 733 ms i cp(charge) charge current at pin cp v cp =1v - 6.0 -m a i cp(discharge) discharge current at pin cp v cp =1v - 5.95 -m a d v cp(pk) peak voltage difference at pin cp when timing - 2.5 - v v rs(ctrl) control voltage at pin rs note 3 - 636 - 600 - 564 mv frequency sweep to ignition i ci(charge) charge current at pin ci v ci = 1.5 v; f ? 85 khz 0.8 1.0 1.2 m a f b bottom frequency v ci at clamp level - 42.9 - khz t ign ignition time - 625 - ms normal operation f b bottom frequency 42.21 42.90 44.59 khz t g conducting time t1 and t2 f b = 43 khz - 10.2 -m s t no non-overlap conductance time 1.05 1.4 1.75 m s i tot total supply current f b = 43 khz; note 4 0.85 1.0 1.1 ma v rs(cap) capacitive mode control voltage note 5 0 20 40 mv v rref reference voltage note 6 2.425 2.5 2.575 v v g1(on) on voltage at pin g1 ? i g1 ? = 1 ma 10.5 -- v v g1(off) off voltage at pin g1 ? i g1 ? = 1 ma -- 0.3 v v g2(on) on voltage at pin g2 ? i g2 ? = 1 ma 10.5 -- v v g2(off) off voltage at pin g2 ? i g2 ? = 1 ma -- 0.3 v r g1(on) high side driver on resistance v (g1 - s1) = 3 v; note 7 100 126 152 w
2001 jan 30 10 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 notes 1. the start-up supply current is specified in a temperature (t vj ) range of 0 to 125 c. for t vj <0 and t vj >125 c the start-up supply current is <350 m a. 2. the clamp margin is defined as the voltage difference between turn-on of the clamp and start of oscillation. the clamp is in the off-state at start of oscillation. 3. data sampling of v rs(ctrl) is performed at the end of conduction of t2. 4. the total supply current is specified in a temperature (t vj ) range of - 20 to +125 c. for t vj < - 20 and t vj >125 c the total supply current is <1.5 ma. 5. data sampling of v rs(cap) is performed at the start of conduction of t2. 6. within the allowed range of r rref , defined as 30 k w +10%. 7. typical values for the on and off resistances at t vj = 87.5 c are: r g2(on) and r g1(on) = 164 w , r g2(off) and r g1(off) = 100 w . 8. the input current at pin rhv may increase to 1600 m a during voltage transient at v in . only for currents i rhv beyond approximately 550 m a is the oscillator frequency proportional to i rhv . 9. the symmetry sym ff is calculated from the quotient sym ff =t1 tot /t2 tot , with t1 tot the time between turn-off of g2 and turn-off of g1, and t2 tot the time between turn-off of g1 and turn-off of g2. r g1(off) high side driver off resistance v (g1 - s1) = 3 v; note 7 60 75 90 w r g2(on) low side driver on resistance v g2 = 3 v; note 7 100 126 152 w r g2(off) low side driver off resistance v g2 = 3 v; note 7 60 75 90 w v drop voltage drop at bootstrap switch i fs = 5 ma 0.6 1.0 1.4 v feed-forward r i(rhv) input resistance at pin rhv 1.54 2.2 2.86 k w i i(rhv) operating range of input current at pin rhv note 8 0 - 1000 m a f ff feed-forward frequency i rhv = 0.75 ma 60.4 63.6 66.15 khz i rhv = 1 ma 80.3 84.5 88.2 khz sym ff symmetry i rhv = 1 ma; note 9 0.9 1.0 1.1 rr ripple rejection f vin = 100 hz - 6 - db r cp(sw) cp switch series resistance i cp = 100 m a 0.75 1.5 2.25 k w r av averaging resistor i cp =10 m a 22.4 32 41.6 k w symbol parameter conditions min. typ. max. unit
2001 jan 30 11 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 design equations bottom frequency: feed-forward frequency: where: C x1 = 3.68 C x2 = 22.28 C t = 0.4 m s Cr int =3k w Cc par = 4.7 pf operating frequency is the maximum of f b , f ff or f cm where: Cf b = bottom frequency Cf ff = feed-forward frequency Cf cm = frequency due to capacitive mode detection preheat time: ignition time: non-overlap time: f b 1 2c cf c par + () x1 r rref r int C () []t + {} -------------------------------------------------------------------------------------------------------------------------- - = f ff 1 2c cf c par + () x2 v rref i irhv () ------------------------------- r int C ? ?? t + ?t y ---------------------------------------------------------------------------------------------------------------------------- = t ph c cp 150 nf ------------------ r rref 30 k w ----------------- = t ign 15 16 ------ t ph = t no 1.4 m s r rref 30k w ----------------- =
2001 jan 30 12 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 application information handbook, full pagewidth mgs994 30 k w 490 k w c ci ci rhv g1 s1 fs g2 vs cp cf lamp rref sgnd pgnd rs c boot 100 nf 100 nf cs9 cs4 c4 c3 cs7 c2 ds6 ds7 ds4 ds3 ds2 ds1 13 79 14 c cp c5 100 nf 8 c cf 100 pf 12 r rref r shunt r rhv v in 10 t2 t1 11 2 3 1 6 5 UBA2021 r1 l1 l2 mains supply fig.7 application diagram.
2001 jan 30 13 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 package outlines unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 1.0 0.4 sot108-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 7 8 1 14 y 076e06 ms-012 pin 1 index 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.35 0.34 0.16 0.15 0.050 1.05 0.041 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.25 0.01 0.004 0.039 0.016 97-05-22 99-12-27 0 2.5 5 mm scale so14: plastic small outline package; 14 leads; body width 3.9 mm sot108-1
2001 jan 30 14 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 unit a max. 1 2 (1) (1) b 1 cd (1) z ee m h l references outline version european projection issue date iec jedec eiaj mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot27-1 95-03-11 99-12-27 a min. a max. b max. w m e e 1 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 2.2 4.2 0.51 3.2 0.068 0.044 0.021 0.015 0.77 0.73 0.014 0.009 0.26 0.24 0.14 0.12 0.01 0.10 0.30 0.32 0.31 0.39 0.33 0.087 0.17 0.020 0.13 050g04 mo-001 sc-501-14 m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 14 1 8 7 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. dip14: plastic dual in-line package; 14 leads (300 mil) sot27-1
2001 jan 30 15 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 soldering introduction this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. through-hole mount packages s oldering by dipping or by solder wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joints for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg(max) ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. m anual soldering apply the soldering iron (24 v or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. surface mount packages r eflow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. w ave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. m anual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2001 jan 30 16 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 suitability of ic packages for wave, re?ow and dipping soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. for sdip packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 5. wave soldering is only suitable for lqfp, qfp and tqfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. mounting package soldering method wave reflow (1) dipping through-hole mount dbs, dip, hdip, sdip, sil suitable (2) - suitable surface mount bga, lfbga, sqfp, tfbga not suitable suitable - hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, sms not suitable (3) suitable - plcc (4) , so, soj suitable suitable - lqfp, qfp, tqfp not recommended (4)(5) suitable - ssop, tssop, vso not recommended (6) suitable -
2001 jan 30 17 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 data sheet status note 1. please consult the most recently issued data sheet before initiating or completing a design. data sheet status product status definitions (1) objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. speci?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2001 jan 30 18 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 notes
2001 jan 30 19 philips semiconductors product speci?cation 630 v driver ic for cfl and tl lamps UBA2021 notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 2001 71 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, marketing communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: philips hungary ltd., h-1119 budapest, fehervari ut 84/a, tel: +36 1 382 1700, fax: +36 1 382 1800 india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland : al.jerozolimskie 195 b, 02-222 warsaw, tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 5f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2451, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 60/14 moo 11, bangna trad road km. 3, bagna, bangkok 10260, tel. +66 2 361 7910, fax. +66 2 398 3447 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 3341 299, fax.+381 11 3342 553 printed in the netherlands 613502/02/pp 20 date of release: 2001 jan 30 document order number: 9397 750 07752


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